| PART |
Description |
Maker |
| PS21963-4 PS21963-4A PS21963-4C PS21963-4W |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-T09 PS21962-AT PS21962-CT PS21962-T PS2196 |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-ST09 PS21962-ST |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| PS21964-S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-C PS21964-A |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-ST |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-AET PS21963-CET PS21963-ET PS21963-ETW |
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| STW10NB60 6241 |
N-CHANNEL Power MOSFET
N - CHANNEL 600V - 0.69 - 10A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STGB10NB60S STGB10NB60ST4 STGP10NB60S_05 GB10NB60S |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
N-CHANNEL 10A 600V TO-220/TP-220FP/DPAK PowerMESH"IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| PS21963-4ES PS21963-4ES09 |
Dual-In-Line Package Intelligent Power Module
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| RJH60A83RDPD-A0-15 |
600V - 10A - IGBT
|
Renesas Electronics Corporation
|
